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Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers

Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi(2)Te(3) exhibited a naturally ultrasensitive nonlinear absorption response to pho...

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Detalles Bibliográficos
Autores principales: Xu, Jin-Long, Sun, Yi-Jian, He, Jing-Liang, Wang, Yan, Zhu, Zhao-Jie, You, Zhen-Yu, Li, Jian-Fu, Chou, Mitch M. C., Lee, Chao-Kuei, Tu, Chao-Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595639/
https://www.ncbi.nlm.nih.gov/pubmed/26442909
http://dx.doi.org/10.1038/srep14856
Descripción
Sumario:Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi(2)Te(3) exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi(2)Te(3) sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm(2) at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO(4) laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi(2)Te(3) is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices.