In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demon...

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Detalles Bibliográficos
Autores principales: Zuo, Zheng, Xu, Zhongguang, Zheng, Renjing, Khanaki, Alireza, Zheng, Jian-Guo, Liu, Jianlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595826/
https://www.ncbi.nlm.nih.gov/pubmed/26442629
http://dx.doi.org/10.1038/srep14760
_version_ 1782393676480118784
author Zuo, Zheng
Xu, Zhongguang
Zheng, Renjing
Khanaki, Alireza
Zheng, Jian-Guo
Liu, Jianlin
author_facet Zuo, Zheng
Xu, Zhongguang
Zheng, Renjing
Khanaki, Alireza
Zheng, Jian-Guo
Liu, Jianlin
author_sort Zuo, Zheng
collection PubMed
description Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.
format Online
Article
Text
id pubmed-4595826
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-45958262015-10-13 In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy Zuo, Zheng Xu, Zhongguang Zheng, Renjing Khanaki, Alireza Zheng, Jian-Guo Liu, Jianlin Sci Rep Article Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. Nature Publishing Group 2015-10-07 /pmc/articles/PMC4595826/ /pubmed/26442629 http://dx.doi.org/10.1038/srep14760 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zuo, Zheng
Xu, Zhongguang
Zheng, Renjing
Khanaki, Alireza
Zheng, Jian-Guo
Liu, Jianlin
In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title_full In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title_fullStr In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title_full_unstemmed In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title_short In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
title_sort in-situ epitaxial growth of graphene/h-bn van der waals heterostructures by molecular beam epitaxy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595826/
https://www.ncbi.nlm.nih.gov/pubmed/26442629
http://dx.doi.org/10.1038/srep14760
work_keys_str_mv AT zuozheng insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy
AT xuzhongguang insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy
AT zhengrenjing insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy
AT khanakialireza insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy
AT zhengjianguo insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy
AT liujianlin insituepitaxialgrowthofgraphenehbnvanderwaalsheterostructuresbymolecularbeamepitaxy

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