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Photo-reactive charge trapping memory based on lanthanide complex
Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory emplo...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4598868/ https://www.ncbi.nlm.nih.gov/pubmed/26449199 http://dx.doi.org/10.1038/srep14998 |
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author | Zhuang, Jiaqing Lo, Wai-Sum Zhou, Li Sun, Qi-Jun Chan, Chi-Fai Zhou, Ye Han, Su-Ting Yan, Yan Wong, Wing-Tak Wong, Ka-Leung Roy, V. A. L. |
author_facet | Zhuang, Jiaqing Lo, Wai-Sum Zhou, Li Sun, Qi-Jun Chan, Chi-Fai Zhou, Ye Han, Su-Ting Yan, Yan Wong, Wing-Tak Wong, Ka-Leung Roy, V. A. L. |
author_sort | Zhuang, Jiaqing |
collection | PubMed |
description | Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)(3)ppta (Eu(tta)(3) = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices. |
format | Online Article Text |
id | pubmed-4598868 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-45988682015-10-13 Photo-reactive charge trapping memory based on lanthanide complex Zhuang, Jiaqing Lo, Wai-Sum Zhou, Li Sun, Qi-Jun Chan, Chi-Fai Zhou, Ye Han, Su-Ting Yan, Yan Wong, Wing-Tak Wong, Ka-Leung Roy, V. A. L. Sci Rep Article Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)(3)ppta (Eu(tta)(3) = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices. Nature Publishing Group 2015-10-09 /pmc/articles/PMC4598868/ /pubmed/26449199 http://dx.doi.org/10.1038/srep14998 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Zhuang, Jiaqing Lo, Wai-Sum Zhou, Li Sun, Qi-Jun Chan, Chi-Fai Zhou, Ye Han, Su-Ting Yan, Yan Wong, Wing-Tak Wong, Ka-Leung Roy, V. A. L. Photo-reactive charge trapping memory based on lanthanide complex |
title | Photo-reactive charge trapping memory based on lanthanide complex |
title_full | Photo-reactive charge trapping memory based on lanthanide complex |
title_fullStr | Photo-reactive charge trapping memory based on lanthanide complex |
title_full_unstemmed | Photo-reactive charge trapping memory based on lanthanide complex |
title_short | Photo-reactive charge trapping memory based on lanthanide complex |
title_sort | photo-reactive charge trapping memory based on lanthanide complex |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4598868/ https://www.ncbi.nlm.nih.gov/pubmed/26449199 http://dx.doi.org/10.1038/srep14998 |
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