Electrical in-situ characterisation of interface stabilised organic thin-film transistors

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is eva...

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Detalles Bibliográficos
Autores principales: Striedinger, Bernd, Fian, Alexander, Petritz, Andreas, Lassnig, Roman, Winkler, Adolf, Stadlober, Barbara
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4599138/
https://www.ncbi.nlm.nih.gov/pubmed/26457122
http://dx.doi.org/10.1002/pssr.201510169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4599138/
https://www.ncbi.nlm.nih.gov/pubmed/26457122
http://dx.doi.org/10.1002/pssr.201510169

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