Pronounced polarization-induced energy level shifts at boundaries of organic semiconductor nanostructures

Organic semiconductor devices rely on the movement of charge at and near interfaces, making an understanding of energy level alignment at these boundaries an essential element of optimizing materials for electronic and optoelectronic applications. Here we employ low temperature scanning tunneling mi...

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Detalles Bibliográficos
Autores principales: Cochrane, K. A., Schiffrin, A., Roussy, T. S., Capsoni, M., Burke, S. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4600718/
https://www.ncbi.nlm.nih.gov/pubmed/26440933
http://dx.doi.org/10.1038/ncomms9312

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4600718/
https://www.ncbi.nlm.nih.gov/pubmed/26440933
http://dx.doi.org/10.1038/ncomms9312

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