Interface designed MoS(2)/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

MoS(2) is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS(2)/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS(2)/bulk semiconductor heterostructure, static charge transfer sh...

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Detalles Bibliográficos
Autores principales: Lin, Shisheng, Li, Xiaoqiang, Wang, Peng, Xu, Zhijuan, Zhang, Shengjiao, Zhong, Huikai, Wu, Zhiqian, Xu, Wenli, Chen, Hongsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4602223/
https://www.ncbi.nlm.nih.gov/pubmed/26458358
http://dx.doi.org/10.1038/srep15103

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