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Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr(0.7)Ca(0.3)MnO(3) Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

Calcium-doped praseodymium manganite films (Pr(0.7)Ca(0.3)MnO(3), PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO(3) (001) and SrTiO(3) (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron...

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Detalles Bibliográficos
Autores principales: Catalano, Maria R, Cucinotta, Giuseppe, Schilirò, Emanuela, Mannini, Matteo, Caneschi, Andrea, Lo Nigro, Raffaella, Smecca, Emanuele, Condorelli, Guglielmo G, Malandrino, Graziella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley & Sons, Ltd 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4603415/
https://www.ncbi.nlm.nih.gov/pubmed/26478849
http://dx.doi.org/10.1002/open.201500038
Descripción
Sumario:Calcium-doped praseodymium manganite films (Pr(0.7)Ca(0.3)MnO(3), PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO(3) (001) and SrTiO(3) (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial PCMO phase films. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) characterization was used to confirm lateral and vertical composition and the purity of the deposited films. Magnetic measurements, obtained in zero-field-cooling (ZFC) and field-cooling (FC) modes, provided evidence of the presence of a ferromagnetic (FM) transition temperature, which was correlated to the transport properties of the film. The functional properties of the deposited films, combined with the structural and chemical characterization collected data, indicate that the MOCVD approach represents a suitable route for the growth of pure, good quality PCMO for the fabrication of novel spintronic devices.