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Domain control of carrier density at a semiconductor-ferroelectric interface

Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as...

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Detalles Bibliográficos
Autores principales: Misirlioglu, I. B., Yildiz, M., Sendur, K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4609957/
https://www.ncbi.nlm.nih.gov/pubmed/26477394
http://dx.doi.org/10.1038/srep14740

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