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Transient dual-energy lasing in a semiconductor microcavity

We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse...

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Autores principales: Hsu, Feng-Kuo, Xie, Wei, Lee, Yi-Shan, Lin, Sheng-Di, Lai, Chih Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4609995/
https://www.ncbi.nlm.nih.gov/pubmed/26477277
http://dx.doi.org/10.1038/srep15347
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author Hsu, Feng-Kuo
Xie, Wei
Lee, Yi-Shan
Lin, Sheng-Di
Lai, Chih Wei
author_facet Hsu, Feng-Kuo
Xie, Wei
Lee, Yi-Shan
Lin, Sheng-Di
Lai, Chih Wei
author_sort Hsu, Feng-Kuo
collection PubMed
description We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20–50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.
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spelling pubmed-46099952015-10-29 Transient dual-energy lasing in a semiconductor microcavity Hsu, Feng-Kuo Xie, Wei Lee, Yi-Shan Lin, Sheng-Di Lai, Chih Wei Sci Rep Article We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20–50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance. Nature Publishing Group 2015-10-19 /pmc/articles/PMC4609995/ /pubmed/26477277 http://dx.doi.org/10.1038/srep15347 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Hsu, Feng-Kuo
Xie, Wei
Lee, Yi-Shan
Lin, Sheng-Di
Lai, Chih Wei
Transient dual-energy lasing in a semiconductor microcavity
title Transient dual-energy lasing in a semiconductor microcavity
title_full Transient dual-energy lasing in a semiconductor microcavity
title_fullStr Transient dual-energy lasing in a semiconductor microcavity
title_full_unstemmed Transient dual-energy lasing in a semiconductor microcavity
title_short Transient dual-energy lasing in a semiconductor microcavity
title_sort transient dual-energy lasing in a semiconductor microcavity
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4609995/
https://www.ncbi.nlm.nih.gov/pubmed/26477277
http://dx.doi.org/10.1038/srep15347
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