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Design and Simulation Test of an Open D-Dot Voltage Sensor

Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is e...

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Detalles Bibliográficos
Autores principales: Bai, Yunjie, Wang, Jingang, Wei, Gang, Yang, Yongming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4610495/
https://www.ncbi.nlm.nih.gov/pubmed/26393590
http://dx.doi.org/10.3390/s150923640
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author Bai, Yunjie
Wang, Jingang
Wei, Gang
Yang, Yongming
author_facet Bai, Yunjie
Wang, Jingang
Wei, Gang
Yang, Yongming
author_sort Bai, Yunjie
collection PubMed
description Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.
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spelling pubmed-46104952015-10-26 Design and Simulation Test of an Open D-Dot Voltage Sensor Bai, Yunjie Wang, Jingang Wei, Gang Yang, Yongming Sensors (Basel) Article Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation. MDPI 2015-09-17 /pmc/articles/PMC4610495/ /pubmed/26393590 http://dx.doi.org/10.3390/s150923640 Text en © 2015 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Bai, Yunjie
Wang, Jingang
Wei, Gang
Yang, Yongming
Design and Simulation Test of an Open D-Dot Voltage Sensor
title Design and Simulation Test of an Open D-Dot Voltage Sensor
title_full Design and Simulation Test of an Open D-Dot Voltage Sensor
title_fullStr Design and Simulation Test of an Open D-Dot Voltage Sensor
title_full_unstemmed Design and Simulation Test of an Open D-Dot Voltage Sensor
title_short Design and Simulation Test of an Open D-Dot Voltage Sensor
title_sort design and simulation test of an open d-dot voltage sensor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4610495/
https://www.ncbi.nlm.nih.gov/pubmed/26393590
http://dx.doi.org/10.3390/s150923640
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