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Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions
In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one structure (No. 1), the silicon membrane is partly etched to form a crossed beam on its top for stress concentration. An aluminum layer is also deposited as part of the beam. Four piezoresistors are fabri...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4610597/ https://www.ncbi.nlm.nih.gov/pubmed/26371001 http://dx.doi.org/10.3390/s150922692 |