Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the “melt-back” effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the p...

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Detalles Bibliográficos
Autores principales: Wang, Li, Walker, Glenn, Chai, Jessica, Iacopi, Alan, Fernandes, Alanna, Dimitrijev, Sima
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614071/
https://www.ncbi.nlm.nih.gov/pubmed/26487465
http://dx.doi.org/10.1038/srep15423

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614071/
https://www.ncbi.nlm.nih.gov/pubmed/26487465
http://dx.doi.org/10.1038/srep15423

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