Cargando…
Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates
A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the “melt-back” effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the p...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614071/ https://www.ncbi.nlm.nih.gov/pubmed/26487465 http://dx.doi.org/10.1038/srep15423 |