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Self-aligned, full solution process polymer field-effect transistor on flexible substrates

Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric sur...

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Detalles Bibliográficos
Autores principales: Yan, Yan, Huang, Long-Biao, Zhou, Ye, Han, Su-Ting, Zhou, Li, Zhuang, Jiaqing, Xu, Zong-Xiang, Roy, V. A. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4620563/
https://www.ncbi.nlm.nih.gov/pubmed/26497412
http://dx.doi.org/10.1038/srep15770
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author Yan, Yan
Huang, Long-Biao
Zhou, Ye
Han, Su-Ting
Zhou, Li
Zhuang, Jiaqing
Xu, Zong-Xiang
Roy, V. A. L.
author_facet Yan, Yan
Huang, Long-Biao
Zhou, Ye
Han, Su-Ting
Zhou, Li
Zhuang, Jiaqing
Xu, Zong-Xiang
Roy, V. A. L.
author_sort Yan, Yan
collection PubMed
description Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests.
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spelling pubmed-46205632015-10-29 Self-aligned, full solution process polymer field-effect transistor on flexible substrates Yan, Yan Huang, Long-Biao Zhou, Ye Han, Su-Ting Zhou, Li Zhuang, Jiaqing Xu, Zong-Xiang Roy, V. A. L. Sci Rep Article Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests. Nature Publishing Group 2015-10-26 /pmc/articles/PMC4620563/ /pubmed/26497412 http://dx.doi.org/10.1038/srep15770 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Yan, Yan
Huang, Long-Biao
Zhou, Ye
Han, Su-Ting
Zhou, Li
Zhuang, Jiaqing
Xu, Zong-Xiang
Roy, V. A. L.
Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title_full Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title_fullStr Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title_full_unstemmed Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title_short Self-aligned, full solution process polymer field-effect transistor on flexible substrates
title_sort self-aligned, full solution process polymer field-effect transistor on flexible substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4620563/
https://www.ncbi.nlm.nih.gov/pubmed/26497412
http://dx.doi.org/10.1038/srep15770
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