Conductance Quantization in Resistive Random Access Memory

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the ne...

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Detalles Bibliográficos
Autores principales: Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623080/
https://www.ncbi.nlm.nih.gov/pubmed/26501832
http://dx.doi.org/10.1186/s11671-015-1118-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623080/
https://www.ncbi.nlm.nih.gov/pubmed/26501832
http://dx.doi.org/10.1186/s11671-015-1118-6

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