Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments

The two-dimensional (2D) growth of cubic-structured (silicon) Si nanosheets (SiNSs) was investigated. Freestanding, single-crystalline SiNSs with a thickness of 5–20 nm were grown on various Si substrates under an atmospheric chemical vapor deposition process. Systematic investigation indicated that...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Jaejun, Kim, Sung Wook, Kim, Ilsoo, Seo, Dongjea, Choi, Heon-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4627974/
https://www.ncbi.nlm.nih.gov/pubmed/26518028
http://dx.doi.org/10.1186/s11671-015-1138-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4627974/
https://www.ncbi.nlm.nih.gov/pubmed/26518028
http://dx.doi.org/10.1186/s11671-015-1138-2

Ejemplares similares