Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by ele...

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Detalles Bibliográficos
Autores principales: Huang, Ruomeng, Kissling, Gabriela P., Jolleys, Andrew, Bartlett, Philip N., Hector, Andrew L., Levason, William, Reid, Gillian, De Groot, C. H. ‘Kees’
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630317/
https://www.ncbi.nlm.nih.gov/pubmed/26525703
http://dx.doi.org/10.1186/s11671-015-1136-4
Descripción
Sumario:We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

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