Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by ele...

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Autores principales: Huang, Ruomeng, Kissling, Gabriela P., Jolleys, Andrew, Bartlett, Philip N., Hector, Andrew L., Levason, William, Reid, Gillian, De Groot, C. H. ‘Kees’
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630317/
https://www.ncbi.nlm.nih.gov/pubmed/26525703
http://dx.doi.org/10.1186/s11671-015-1136-4
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author Huang, Ruomeng
Kissling, Gabriela P.
Jolleys, Andrew
Bartlett, Philip N.
Hector, Andrew L.
Levason, William
Reid, Gillian
De Groot, C. H. ‘Kees’
author_facet Huang, Ruomeng
Kissling, Gabriela P.
Jolleys, Andrew
Bartlett, Philip N.
Hector, Andrew L.
Levason, William
Reid, Gillian
De Groot, C. H. ‘Kees’
author_sort Huang, Ruomeng
collection PubMed
description We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.
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spelling pubmed-46303172015-11-10 Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film Huang, Ruomeng Kissling, Gabriela P. Jolleys, Andrew Bartlett, Philip N. Hector, Andrew L. Levason, William Reid, Gillian De Groot, C. H. ‘Kees’ Nanoscale Res Lett Nano Express We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles. Springer US 2015-11-02 /pmc/articles/PMC4630317/ /pubmed/26525703 http://dx.doi.org/10.1186/s11671-015-1136-4 Text en © Huang et al. 2015 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Huang, Ruomeng
Kissling, Gabriela P.
Jolleys, Andrew
Bartlett, Philip N.
Hector, Andrew L.
Levason, William
Reid, Gillian
De Groot, C. H. ‘Kees’
Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title_full Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title_fullStr Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title_full_unstemmed Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title_short Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
title_sort phase-change memory properties of electrodeposited ge-sb-te thin film
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630317/
https://www.ncbi.nlm.nih.gov/pubmed/26525703
http://dx.doi.org/10.1186/s11671-015-1136-4
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