Electrical Double Layer Capacitance in a Graphene-embedded Al(2)O(3) Gate Dielectric

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al(2)O(3) gate dielectric with a relatively high dielectric constant of 15.5, which is abo...

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Detalles Bibliográficos
Autores principales: Ki Min, Bok, Kim, Seong K., Jun Kim, Seong, Ho Kim, Sung, Kang, Min-A, Park, Chong-Yun, Song, Wooseok, Myung, Sung, Lim, Jongsun, An, Ki-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4632157/
https://www.ncbi.nlm.nih.gov/pubmed/26530817
http://dx.doi.org/10.1038/srep16001

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4632157/
https://www.ncbi.nlm.nih.gov/pubmed/26530817
http://dx.doi.org/10.1038/srep16001

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