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Electrical Double Layer Capacitance in a Graphene-embedded Al(2)O(3) Gate Dielectric
Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al(2)O(3) gate dielectric with a relatively high dielectric constant of 15.5, which is abo...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4632157/ https://www.ncbi.nlm.nih.gov/pubmed/26530817 http://dx.doi.org/10.1038/srep16001 |