Wafer-scale growth of VO(2) thin films using a combinatorial approach

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films...

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Detalles Bibliográficos
Autores principales: Zhang, Hai-Tian, Zhang, Lei, Mukherjee, Debangshu, Zheng, Yuan-Xia, Haislmaier, Ryan C., Alem, Nasim, Engel-Herbert, Roman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633718/
https://www.ncbi.nlm.nih.gov/pubmed/26450653
http://dx.doi.org/10.1038/ncomms9475

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633718/
https://www.ncbi.nlm.nih.gov/pubmed/26450653
http://dx.doi.org/10.1038/ncomms9475

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