Cargando…
Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films
Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition...
Autores principales: | Molatta, Sebastian, Haindl, Silvia, Trommler, Sascha, Schulze, Michael, Wurmehl, Sabine, Hühne, Ruben |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4637838/ https://www.ncbi.nlm.nih.gov/pubmed/26548645 http://dx.doi.org/10.1038/srep16334 |
Ejemplares similares
-
Challenges for Pulsed Laser Deposition of FeSe Thin Films
por: Obata, Yukiko, et al.
Publicado: (2021) -
Origin of the emergence of higher T(c) than bulk in iron chalcogenide thin films
por: Seo, Sehun, et al.
Publicado: (2017) -
In-situ growth of superconducting SmO(1−x)F(x)FeAs thin films by pulsed laser deposition
por: Haindl, Silvia, et al.
Publicado: (2016) -
Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation
por: Bulai, Georgiana, et al.
Publicado: (2019) -
Chalcogenide photovoltaics: physics, technologies, and thin film devices
por: Scheer, Roland, et al.
Publicado: (2011)