Optically detecting the edge-state of a three-dimensional topological insulator under ambient conditions by ultrafast infrared photoluminescence spectroscopy

Ultrafast infrared photoluminescence spectroscopy was applied to a three-dimensional topological insulator TlBiSe(2) under ambient conditions. The dynamics of the luminescence exhibited bulk-insulating and gapless characteristics bounded by the bulk band gap energy. The existence of the topologicall...

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Detalles Bibliográficos
Autores principales: Maezawa, Shun-ya, Watanabe, Hiroshi, Takeda, Masahiro, Kuroda, Kenta, Someya, Takashi, Matsuda, Iwao, Suemoto, Tohru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4639728/
https://www.ncbi.nlm.nih.gov/pubmed/26552784
http://dx.doi.org/10.1038/srep16443
Descripción
Sumario:Ultrafast infrared photoluminescence spectroscopy was applied to a three-dimensional topological insulator TlBiSe(2) under ambient conditions. The dynamics of the luminescence exhibited bulk-insulating and gapless characteristics bounded by the bulk band gap energy. The existence of the topologically protected surface state and the picosecond-order relaxation time of the surface carriers, which was distinguishable from the bulk response, were observed. Our results provide a practical method applicable to topological insulators under ambient conditions for device applications.

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