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High-performing nonlinear visualization of terahertz radiation on a silicon charge-coupled device
Photoinduced electron transitions can lead to significant changes of the macroscopic electronic properties in semiconductors. This principle is responsible for the detection of light with charge-coupled devices. Their spectral sensitivity is limited by the semiconductor bandgap which has restricted...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Pub. Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4639799/ https://www.ncbi.nlm.nih.gov/pubmed/26496973 http://dx.doi.org/10.1038/ncomms9439 |