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High-performance transistors for bioelectronics through tuning of channel thickness
Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their d...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4640642/ https://www.ncbi.nlm.nih.gov/pubmed/26601178 http://dx.doi.org/10.1126/sciadv.1400251 |
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author | Rivnay, Jonathan Leleux, Pierre Ferro, Marc Sessolo, Michele Williamson, Adam Koutsouras, Dimitrios A. Khodagholy, Dion Ramuz, Marc Strakosas, Xenofon Owens, Roisin M. Benar, Christian Badier, Jean-Michel Bernard, Christophe Malliaras, George G. |
author_facet | Rivnay, Jonathan Leleux, Pierre Ferro, Marc Sessolo, Michele Williamson, Adam Koutsouras, Dimitrios A. Khodagholy, Dion Ramuz, Marc Strakosas, Xenofon Owens, Roisin M. Benar, Christian Badier, Jean-Michel Bernard, Christophe Malliaras, George G. |
author_sort | Rivnay, Jonathan |
collection | PubMed |
description | Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance. |
format | Online Article Text |
id | pubmed-4640642 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-46406422015-11-23 High-performance transistors for bioelectronics through tuning of channel thickness Rivnay, Jonathan Leleux, Pierre Ferro, Marc Sessolo, Michele Williamson, Adam Koutsouras, Dimitrios A. Khodagholy, Dion Ramuz, Marc Strakosas, Xenofon Owens, Roisin M. Benar, Christian Badier, Jean-Michel Bernard, Christophe Malliaras, George G. Sci Adv Research Articles Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance. American Association for the Advancement of Science 2015-05-22 /pmc/articles/PMC4640642/ /pubmed/26601178 http://dx.doi.org/10.1126/sciadv.1400251 Text en Copyright © 2015, The Authors http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Rivnay, Jonathan Leleux, Pierre Ferro, Marc Sessolo, Michele Williamson, Adam Koutsouras, Dimitrios A. Khodagholy, Dion Ramuz, Marc Strakosas, Xenofon Owens, Roisin M. Benar, Christian Badier, Jean-Michel Bernard, Christophe Malliaras, George G. High-performance transistors for bioelectronics through tuning of channel thickness |
title | High-performance transistors for bioelectronics through tuning of channel thickness |
title_full | High-performance transistors for bioelectronics through tuning of channel thickness |
title_fullStr | High-performance transistors for bioelectronics through tuning of channel thickness |
title_full_unstemmed | High-performance transistors for bioelectronics through tuning of channel thickness |
title_short | High-performance transistors for bioelectronics through tuning of channel thickness |
title_sort | high-performance transistors for bioelectronics through tuning of channel thickness |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4640642/ https://www.ncbi.nlm.nih.gov/pubmed/26601178 http://dx.doi.org/10.1126/sciadv.1400251 |
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