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High-performance transistors for bioelectronics through tuning of channel thickness

Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their d...

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Autores principales: Rivnay, Jonathan, Leleux, Pierre, Ferro, Marc, Sessolo, Michele, Williamson, Adam, Koutsouras, Dimitrios A., Khodagholy, Dion, Ramuz, Marc, Strakosas, Xenofon, Owens, Roisin M., Benar, Christian, Badier, Jean-Michel, Bernard, Christophe, Malliaras, George G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4640642/
https://www.ncbi.nlm.nih.gov/pubmed/26601178
http://dx.doi.org/10.1126/sciadv.1400251
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author Rivnay, Jonathan
Leleux, Pierre
Ferro, Marc
Sessolo, Michele
Williamson, Adam
Koutsouras, Dimitrios A.
Khodagholy, Dion
Ramuz, Marc
Strakosas, Xenofon
Owens, Roisin M.
Benar, Christian
Badier, Jean-Michel
Bernard, Christophe
Malliaras, George G.
author_facet Rivnay, Jonathan
Leleux, Pierre
Ferro, Marc
Sessolo, Michele
Williamson, Adam
Koutsouras, Dimitrios A.
Khodagholy, Dion
Ramuz, Marc
Strakosas, Xenofon
Owens, Roisin M.
Benar, Christian
Badier, Jean-Michel
Bernard, Christophe
Malliaras, George G.
author_sort Rivnay, Jonathan
collection PubMed
description Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance.
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spelling pubmed-46406422015-11-23 High-performance transistors for bioelectronics through tuning of channel thickness Rivnay, Jonathan Leleux, Pierre Ferro, Marc Sessolo, Michele Williamson, Adam Koutsouras, Dimitrios A. Khodagholy, Dion Ramuz, Marc Strakosas, Xenofon Owens, Roisin M. Benar, Christian Badier, Jean-Michel Bernard, Christophe Malliaras, George G. Sci Adv Research Articles Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance. American Association for the Advancement of Science 2015-05-22 /pmc/articles/PMC4640642/ /pubmed/26601178 http://dx.doi.org/10.1126/sciadv.1400251 Text en Copyright © 2015, The Authors http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Rivnay, Jonathan
Leleux, Pierre
Ferro, Marc
Sessolo, Michele
Williamson, Adam
Koutsouras, Dimitrios A.
Khodagholy, Dion
Ramuz, Marc
Strakosas, Xenofon
Owens, Roisin M.
Benar, Christian
Badier, Jean-Michel
Bernard, Christophe
Malliaras, George G.
High-performance transistors for bioelectronics through tuning of channel thickness
title High-performance transistors for bioelectronics through tuning of channel thickness
title_full High-performance transistors for bioelectronics through tuning of channel thickness
title_fullStr High-performance transistors for bioelectronics through tuning of channel thickness
title_full_unstemmed High-performance transistors for bioelectronics through tuning of channel thickness
title_short High-performance transistors for bioelectronics through tuning of channel thickness
title_sort high-performance transistors for bioelectronics through tuning of channel thickness
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4640642/
https://www.ncbi.nlm.nih.gov/pubmed/26601178
http://dx.doi.org/10.1126/sciadv.1400251
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