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Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics
Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642510/ https://www.ncbi.nlm.nih.gov/pubmed/26271456 http://dx.doi.org/10.1038/srep13088 |
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author | Park, Sungjun Lee, SeYeong Kim, Chang-Hyun Lee, Ilseop Lee, Won-June Kim, Sohee Lee, Byung-Geun Jang, Jae-Hyung Yoon, Myung-Han |
author_facet | Park, Sungjun Lee, SeYeong Kim, Chang-Hyun Lee, Ilseop Lee, Won-June Kim, Sohee Lee, Byung-Geun Jang, Jae-Hyung Yoon, Myung-Han |
author_sort | Park, Sungjun |
collection | PubMed |
description | Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 10(7), and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. |
format | Online Article Text |
id | pubmed-4642510 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-46425102015-11-20 Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics Park, Sungjun Lee, SeYeong Kim, Chang-Hyun Lee, Ilseop Lee, Won-June Kim, Sohee Lee, Byung-Geun Jang, Jae-Hyung Yoon, Myung-Han Sci Rep Article Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 10(7), and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. Nature Publishing Group 2015-08-14 /pmc/articles/PMC4642510/ /pubmed/26271456 http://dx.doi.org/10.1038/srep13088 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Park, Sungjun Lee, SeYeong Kim, Chang-Hyun Lee, Ilseop Lee, Won-June Kim, Sohee Lee, Byung-Geun Jang, Jae-Hyung Yoon, Myung-Han Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title | Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title_full | Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title_fullStr | Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title_full_unstemmed | Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title_short | Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics |
title_sort | sub-0.5 v highly stable aqueous salt gated metal oxide electronics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642510/ https://www.ncbi.nlm.nih.gov/pubmed/26271456 http://dx.doi.org/10.1038/srep13088 |
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