Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures

[Image: see text] Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal–semiconductor–metal (Al–Ge–Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are at...

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Detalles Bibliográficos
Autores principales: Brunbauer, Florian M., Bertagnolli, Emmerich, Lugstein, Alois
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4643355/
https://www.ncbi.nlm.nih.gov/pubmed/26426433
http://dx.doi.org/10.1021/acs.nanolett.5b03169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4643355/
https://www.ncbi.nlm.nih.gov/pubmed/26426433
http://dx.doi.org/10.1021/acs.nanolett.5b03169

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