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Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures
[Image: see text] Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal–semiconductor–metal (Al–Ge–Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are at...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4643355/ https://www.ncbi.nlm.nih.gov/pubmed/26426433 http://dx.doi.org/10.1021/acs.nanolett.5b03169 |