Silicene nanomesh

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. Th...

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Detalles Bibliográficos
Autores principales: Pan, Feng, Wang, Yangyang, Jiang, Kaili, Ni, Zeyuan, Ma, Jianhua, Zheng, Jiaxin, Quhe, Ruge, Shi, Junjie, Yang, Jinbo, Chen, Changle, Lu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4649852/
https://www.ncbi.nlm.nih.gov/pubmed/25766672
http://dx.doi.org/10.1038/srep09075
Descripción
Sumario:Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

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