Silicene nanomesh

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. Th...

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Autores principales: Pan, Feng, Wang, Yangyang, Jiang, Kaili, Ni, Zeyuan, Ma, Jianhua, Zheng, Jiaxin, Quhe, Ruge, Shi, Junjie, Yang, Jinbo, Chen, Changle, Lu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4649852/
https://www.ncbi.nlm.nih.gov/pubmed/25766672
http://dx.doi.org/10.1038/srep09075
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author Pan, Feng
Wang, Yangyang
Jiang, Kaili
Ni, Zeyuan
Ma, Jianhua
Zheng, Jiaxin
Quhe, Ruge
Shi, Junjie
Yang, Jinbo
Chen, Changle
Lu, Jing
author_facet Pan, Feng
Wang, Yangyang
Jiang, Kaili
Ni, Zeyuan
Ma, Jianhua
Zheng, Jiaxin
Quhe, Ruge
Shi, Junjie
Yang, Jinbo
Chen, Changle
Lu, Jing
author_sort Pan, Feng
collection PubMed
description Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.
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spelling pubmed-46498522015-11-23 Silicene nanomesh Pan, Feng Wang, Yangyang Jiang, Kaili Ni, Zeyuan Ma, Jianhua Zheng, Jiaxin Quhe, Ruge Shi, Junjie Yang, Jinbo Chen, Changle Lu, Jing Sci Rep Article Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature. Nature Publishing Group 2015-03-13 /pmc/articles/PMC4649852/ /pubmed/25766672 http://dx.doi.org/10.1038/srep09075 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Pan, Feng
Wang, Yangyang
Jiang, Kaili
Ni, Zeyuan
Ma, Jianhua
Zheng, Jiaxin
Quhe, Ruge
Shi, Junjie
Yang, Jinbo
Chen, Changle
Lu, Jing
Silicene nanomesh
title Silicene nanomesh
title_full Silicene nanomesh
title_fullStr Silicene nanomesh
title_full_unstemmed Silicene nanomesh
title_short Silicene nanomesh
title_sort silicene nanomesh
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4649852/
https://www.ncbi.nlm.nih.gov/pubmed/25766672
http://dx.doi.org/10.1038/srep09075
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AT nizeyuan silicenenanomesh
AT majianhua silicenenanomesh
AT zhengjiaxin silicenenanomesh
AT quheruge silicenenanomesh
AT shijunjie silicenenanomesh
AT yangjinbo silicenenanomesh
AT chenchangle silicenenanomesh
AT lujing silicenenanomesh

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