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Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters
A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes p...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4650707/ https://www.ncbi.nlm.nih.gov/pubmed/26042359 http://dx.doi.org/10.1038/srep10976 |
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author | Youh, Meng-Jey Tseng, Chun-Lung Jhuang, Meng-Han Chiu, Sheng-Cheng Huang, Li-Hu Gong, Jyun-An Li, Yuan-Yao |
author_facet | Youh, Meng-Jey Tseng, Chun-Lung Jhuang, Meng-Han Chiu, Sheng-Cheng Huang, Li-Hu Gong, Jyun-An Li, Yuan-Yao |
author_sort | Youh, Meng-Jey |
collection | PubMed |
description | A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm(2)) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm(2) and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%. |
format | Online Article Text |
id | pubmed-4650707 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-46507072015-11-24 Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters Youh, Meng-Jey Tseng, Chun-Lung Jhuang, Meng-Han Chiu, Sheng-Cheng Huang, Li-Hu Gong, Jyun-An Li, Yuan-Yao Sci Rep Article A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm(2)) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm(2) and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%. Nature Publishing Group 2015-06-04 /pmc/articles/PMC4650707/ /pubmed/26042359 http://dx.doi.org/10.1038/srep10976 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Youh, Meng-Jey Tseng, Chun-Lung Jhuang, Meng-Han Chiu, Sheng-Cheng Huang, Li-Hu Gong, Jyun-An Li, Yuan-Yao Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title | Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title_full | Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title_fullStr | Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title_full_unstemmed | Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title_short | Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters |
title_sort | flat panel light source with lateral gate structure based on sic nanowire field emitters |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4650707/ https://www.ncbi.nlm.nih.gov/pubmed/26042359 http://dx.doi.org/10.1038/srep10976 |
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