Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronic...

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Detalles Bibliográficos
Autores principales: Drost, Robert, Kezilebieke, Shawulienu, M. Ervasti, Mikko, Hämäläinen, Sampsa K., Schulz, Fabian, Harju, Ari, Liljeroth, Peter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653630/
https://www.ncbi.nlm.nih.gov/pubmed/26584674
http://dx.doi.org/10.1038/srep16741
Descripción
Sumario:The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

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