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RM 8111: Development of a Prototype Linewidth Standard

Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use...

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Detalles Bibliográficos
Autores principales: Cresswell, Michael W., Guthrie, William F., Dixson, Ronald G., Allen, Richard A., Murabito, Christine E., Martinez De Pinillos, J. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2006
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4659447/
https://www.ncbi.nlm.nih.gov/pubmed/27274928
http://dx.doi.org/10.6028/jres.111.016
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author Cresswell, Michael W.
Guthrie, William F.
Dixson, Ronald G.
Allen, Richard A.
Murabito, Christine E.
Martinez De Pinillos, J. V.
author_facet Cresswell, Michael W.
Guthrie, William F.
Dixson, Ronald G.
Allen, Richard A.
Murabito, Christine E.
Martinez De Pinillos, J. V.
author_sort Cresswell, Michael W.
collection PubMed
description Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each reference material is configured as a 10 mm × 11 mm silicon test-structure chip that is mounted in a 200 mm silicon carrier wafer. The fabrication of both the chip and the carrier wafer uses the type of lattice-plane-selective etching that is commonly employed in the fabrication of micro electro-mechanical systems devices. The certified CDs of the reference features are determined from Atomic Force Microscope (AFM) measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch whose value is traceable to the SI meter.
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spelling pubmed-46594472016-06-03 RM 8111: Development of a Prototype Linewidth Standard Cresswell, Michael W. Guthrie, William F. Dixson, Ronald G. Allen, Richard A. Murabito, Christine E. Martinez De Pinillos, J. V. J Res Natl Inst Stand Technol Article Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each reference material is configured as a 10 mm × 11 mm silicon test-structure chip that is mounted in a 200 mm silicon carrier wafer. The fabrication of both the chip and the carrier wafer uses the type of lattice-plane-selective etching that is commonly employed in the fabrication of micro electro-mechanical systems devices. The certified CDs of the reference features are determined from Atomic Force Microscope (AFM) measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch whose value is traceable to the SI meter. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2006 2006-06-01 /pmc/articles/PMC4659447/ /pubmed/27274928 http://dx.doi.org/10.6028/jres.111.016 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Cresswell, Michael W.
Guthrie, William F.
Dixson, Ronald G.
Allen, Richard A.
Murabito, Christine E.
Martinez De Pinillos, J. V.
RM 8111: Development of a Prototype Linewidth Standard
title RM 8111: Development of a Prototype Linewidth Standard
title_full RM 8111: Development of a Prototype Linewidth Standard
title_fullStr RM 8111: Development of a Prototype Linewidth Standard
title_full_unstemmed RM 8111: Development of a Prototype Linewidth Standard
title_short RM 8111: Development of a Prototype Linewidth Standard
title_sort rm 8111: development of a prototype linewidth standard
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4659447/
https://www.ncbi.nlm.nih.gov/pubmed/27274928
http://dx.doi.org/10.6028/jres.111.016
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