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RM 8111: Development of a Prototype Linewidth Standard
Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
2006
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4659447/ https://www.ncbi.nlm.nih.gov/pubmed/27274928 http://dx.doi.org/10.6028/jres.111.016 |
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author | Cresswell, Michael W. Guthrie, William F. Dixson, Ronald G. Allen, Richard A. Murabito, Christine E. Martinez De Pinillos, J. V. |
author_facet | Cresswell, Michael W. Guthrie, William F. Dixson, Ronald G. Allen, Richard A. Murabito, Christine E. Martinez De Pinillos, J. V. |
author_sort | Cresswell, Michael W. |
collection | PubMed |
description | Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each reference material is configured as a 10 mm × 11 mm silicon test-structure chip that is mounted in a 200 mm silicon carrier wafer. The fabrication of both the chip and the carrier wafer uses the type of lattice-plane-selective etching that is commonly employed in the fabrication of micro electro-mechanical systems devices. The certified CDs of the reference features are determined from Atomic Force Microscope (AFM) measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch whose value is traceable to the SI meter. |
format | Online Article Text |
id | pubmed-4659447 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2006 |
publisher | [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology |
record_format | MEDLINE/PubMed |
spelling | pubmed-46594472016-06-03 RM 8111: Development of a Prototype Linewidth Standard Cresswell, Michael W. Guthrie, William F. Dixson, Ronald G. Allen, Richard A. Murabito, Christine E. Martinez De Pinillos, J. V. J Res Natl Inst Stand Technol Article Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each reference material is configured as a 10 mm × 11 mm silicon test-structure chip that is mounted in a 200 mm silicon carrier wafer. The fabrication of both the chip and the carrier wafer uses the type of lattice-plane-selective etching that is commonly employed in the fabrication of micro electro-mechanical systems devices. The certified CDs of the reference features are determined from Atomic Force Microscope (AFM) measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch whose value is traceable to the SI meter. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2006 2006-06-01 /pmc/articles/PMC4659447/ /pubmed/27274928 http://dx.doi.org/10.6028/jres.111.016 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright. |
spellingShingle | Article Cresswell, Michael W. Guthrie, William F. Dixson, Ronald G. Allen, Richard A. Murabito, Christine E. Martinez De Pinillos, J. V. RM 8111: Development of a Prototype Linewidth Standard |
title | RM 8111: Development of a Prototype Linewidth Standard |
title_full | RM 8111: Development of a Prototype Linewidth Standard |
title_fullStr | RM 8111: Development of a Prototype Linewidth Standard |
title_full_unstemmed | RM 8111: Development of a Prototype Linewidth Standard |
title_short | RM 8111: Development of a Prototype Linewidth Standard |
title_sort | rm 8111: development of a prototype linewidth standard |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4659447/ https://www.ncbi.nlm.nih.gov/pubmed/27274928 http://dx.doi.org/10.6028/jres.111.016 |
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