High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interf...

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Detalles Bibliográficos
Autores principales: Shen, Li-Fan, Yip, SenPo, Yang, Zai-xing, Fang, Ming, Hung, TakFu, Pun, Edwin Y.B., Ho, Johnny C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660349/
https://www.ncbi.nlm.nih.gov/pubmed/26607169
http://dx.doi.org/10.1038/srep16871

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660349/
https://www.ncbi.nlm.nih.gov/pubmed/26607169
http://dx.doi.org/10.1038/srep16871

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