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High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interf...

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Detalles Bibliográficos
Autores principales:	Shen, Li-Fan, Yip, SenPo, Yang, Zai-xing, Fang, Ming, Hung, TakFu, Pun, Edwin Y.B., Ho, Johnny C.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660349/ https://www.ncbi.nlm.nih.gov/pubmed/26607169 http://dx.doi.org/10.1038/srep16871

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