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High I(on)/I(off) current ratio graphene field effect transistor: the role of line defect

The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior o...

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Detalles Bibliográficos
Autores principales:	Tajarrod, Mohammad Hadi, Saghai, Hassan Rasooli
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2015
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660928/ https://www.ncbi.nlm.nih.gov/pubmed/26665077 http://dx.doi.org/10.3762/bjnano.6.210

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