Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. Measurements by atomic force microscopy (AFM) and transmission electron microscopy (TEM) demonstrate th...

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Detalles Bibliográficos
Autores principales: Zhao, Wan-Ru, Weng, Guo-En, Wang, Jian-Yu, Zhang, Jiang-Yong, Liang, Hong-Wei, Sekiguchi, Takashi, Zhang, Bao-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4666851/
https://www.ncbi.nlm.nih.gov/pubmed/26625883
http://dx.doi.org/10.1186/s11671-015-1171-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4666851/
https://www.ncbi.nlm.nih.gov/pubmed/26625883
http://dx.doi.org/10.1186/s11671-015-1171-1

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