Cargando…

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. Measurements by atomic force microscopy (AFM) and transmission electron microscopy (TEM) demonstrate th...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhao, Wan-Ru, Weng, Guo-En, Wang, Jian-Yu, Zhang, Jiang-Yong, Liang, Hong-Wei, Sekiguchi, Takashi, Zhang, Bao-Ping
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2015
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4666851/ https://www.ncbi.nlm.nih.gov/pubmed/26625883 http://dx.doi.org/10.1186/s11671-015-1171-1

Ejemplares similares

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
por: Zhang, Feng, et al.
Publicado: (2016)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In(x)Ga(1−x)N/GaN Multiple Quantum Wells
por: Chen, Cheng-Chang, et al.
Publicado: (2021)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
por: Ha, Ryong, et al.
Publicado: (2013)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading
por: Chang, Le, et al.
Publicado: (2020)

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer
por: Lee, Hee Kwan, et al.
Publicado: (2012)

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
por: Zhang, Jin, et al.
Publicado: (2014)

Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green
por: Weng, Guo-En, et al.
Publicado: (2015)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Investigation on Surface Polarization of Al(2)O(3)-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
por: Duan, Tian Li, et al.
Publicado: (2017)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
por: Yang, Fann-Wei, et al.
Publicado: (2017)

Strain Relief Analysis of InN Quantum Dots Grown on GaN
por: Lozano, Juan G, et al.
Publicado: (2007)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well
por: Wang, Jun, et al.
Publicado: (2009)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Synthesis and field emission studies of tower-like GaN nanowires
por: Liu, Yihe, et al.
Publicado: (2014)

Microstructure of non-polar GaN on LiGaO(2 )grown by plasma-assisted MBE
por: Shih, Cheng-Hung, et al.
Publicado: (2011)

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
por: Kumar, Ashutosh, et al.
Publicado: (2018)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
por: Um, Dae-Young, et al.
Publicado: (2021)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_nb16mcdcff74ng0j9pd7ldel5p