Cargando…
Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition
Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and comple...
Autores principales: | Min, Daehong, Park, Donghwy, Jang, Jongjin, Lee, Kyuseung, Nam, Okhyun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4667288/ https://www.ncbi.nlm.nih.gov/pubmed/26626890 http://dx.doi.org/10.1038/srep17372 |
Ejemplares similares
-
Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering
por: Min, Daehong, et al.
Publicado: (2017) -
Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN
por: Soh, CB, et al.
Publicado: (2010) -
An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures
por: Sui, Jingyang, et al.
Publicado: (2020) -
Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
por: Lin, Pei-Yin, et al.
Publicado: (2014) -
Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar [Formula: see text] InGaN/GaN Multi-Quantum Wells
por: Sheen, Mi-Hyang, et al.
Publicado: (2023)