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Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene
We have investigated the effect of electronic topological transition on the electric field-induced band gap in sliding bilayer graphene by using the density functional theory calculations. The electric field-induced band gap was found to be extremely sensitive to the electronic topological transitio...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4669455/ https://www.ncbi.nlm.nih.gov/pubmed/26635178 http://dx.doi.org/10.1038/srep17490 |
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author | Lee, Kyu Won Lee, Cheol Eui |
author_facet | Lee, Kyu Won Lee, Cheol Eui |
author_sort | Lee, Kyu Won |
collection | PubMed |
description | We have investigated the effect of electronic topological transition on the electric field-induced band gap in sliding bilayer graphene by using the density functional theory calculations. The electric field-induced band gap was found to be extremely sensitive to the electronic topological transition. At the electronic topological transition induced by layer sliding, four Dirac cones in the Bernal-stacked bilayer graphene reduces to two Dirac cones with equal or unequal Dirac energies depending on the sliding direction. While the critical electric field required for the band gap opening increases with increasing lateral shift for the two Dirac cones with unequal Dirac energies, the critical field is essentially zero with or without a lateral shift for the two Dirac cones with equal Dirac energies. The critical field is determined by the Dirac energy difference and the electronic screening effect. The electronic screening effect was also found to be enhanced with increasing lateral shift, apparently indicating that the massless helical and massive chiral fermions are responsible for the perfect and imperfect electronic screening, respectively. |
format | Online Article Text |
id | pubmed-4669455 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-46694552015-12-09 Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene Lee, Kyu Won Lee, Cheol Eui Sci Rep Article We have investigated the effect of electronic topological transition on the electric field-induced band gap in sliding bilayer graphene by using the density functional theory calculations. The electric field-induced band gap was found to be extremely sensitive to the electronic topological transition. At the electronic topological transition induced by layer sliding, four Dirac cones in the Bernal-stacked bilayer graphene reduces to two Dirac cones with equal or unequal Dirac energies depending on the sliding direction. While the critical electric field required for the band gap opening increases with increasing lateral shift for the two Dirac cones with unequal Dirac energies, the critical field is essentially zero with or without a lateral shift for the two Dirac cones with equal Dirac energies. The critical field is determined by the Dirac energy difference and the electronic screening effect. The electronic screening effect was also found to be enhanced with increasing lateral shift, apparently indicating that the massless helical and massive chiral fermions are responsible for the perfect and imperfect electronic screening, respectively. Nature Publishing Group 2015-12-04 /pmc/articles/PMC4669455/ /pubmed/26635178 http://dx.doi.org/10.1038/srep17490 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Lee, Kyu Won Lee, Cheol Eui Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title | Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title_full | Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title_fullStr | Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title_full_unstemmed | Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title_short | Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
title_sort | extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4669455/ https://www.ncbi.nlm.nih.gov/pubmed/26635178 http://dx.doi.org/10.1038/srep17490 |
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