Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation

The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tai...

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Detalles Bibliográficos
Autores principales: Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Wöll, C., Usachov, D. Yu., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T., Grüneis, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4671056/
https://www.ncbi.nlm.nih.gov/pubmed/26639608
http://dx.doi.org/10.1038/srep17700

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