Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga(0.665)In(0.335)As(x)Sb(1 − x)/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detec...

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Detalles Bibliográficos
Autores principales: Motyka, Marcin, Sęk, Grzegorz, Ryczko, Krzysztof, Dyksik, Mateusz, Weih, Robert, Patriarche, Gilles, Misiewicz, Jan, Kamp, Martin, Höfling, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4671988/
https://www.ncbi.nlm.nih.gov/pubmed/26643652
http://dx.doi.org/10.1186/s11671-015-1183-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4671988/
https://www.ncbi.nlm.nih.gov/pubmed/26643652
http://dx.doi.org/10.1186/s11671-015-1183-x

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