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Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga(0.665)In(0.335)As(x)Sb(1 − x)/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detec...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4671988/ https://www.ncbi.nlm.nih.gov/pubmed/26643652 http://dx.doi.org/10.1186/s11671-015-1183-x |