Cargando…
GaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes
Nowadays, III-V semiconductors are interesting candidate materials for the tailoring of two dimensional (2D) graphene-like structures. These new 2D materials have attracted profound interest opening the possibility to find semiconductor materials with unexplored properties. First-principles density...
Autores principales: | Camacho-Mojica, Dulce C., López-Urías, Florentino |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4674713/ https://www.ncbi.nlm.nih.gov/pubmed/26658148 http://dx.doi.org/10.1038/srep17902 |
Ejemplares similares
-
Carbon Nanotubes Having Haeckelite Defects as Potential Drug Carriers. Molecular Dynamics Simulation
por: Torres, Camila, et al.
Publicado: (2019) -
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
por: Austin, Aaron J., et al.
Publicado: (2020) -
Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
por: Evropeitsev, Eugenii, et al.
Publicado: (2023) -
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022) -
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)