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Optically initialized robust valley-polarized holes in monolayer WSe(2)

A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic dev...

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Autores principales: Hsu, Wei-Ting, Chen, Yen-Lun, Chen, Chiang-Hsiao, Liu, Pang-Shiuan, Hou, Tuo-Hung, Li, Lain-Jong, Chang, Wen-Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4674763/
https://www.ncbi.nlm.nih.gov/pubmed/26603335
http://dx.doi.org/10.1038/ncomms9963
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author Hsu, Wei-Ting
Chen, Yen-Lun
Chen, Chiang-Hsiao
Liu, Pang-Shiuan
Hou, Tuo-Hung
Li, Lain-Jong
Chang, Wen-Hao
author_facet Hsu, Wei-Ting
Chen, Yen-Lun
Chen, Chiang-Hsiao
Liu, Pang-Shiuan
Hou, Tuo-Hung
Li, Lain-Jong
Chang, Wen-Hao
author_sort Hsu, Wei-Ting
collection PubMed
description A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe(2) can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (∼10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.
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spelling pubmed-46747632015-12-21 Optically initialized robust valley-polarized holes in monolayer WSe(2) Hsu, Wei-Ting Chen, Yen-Lun Chen, Chiang-Hsiao Liu, Pang-Shiuan Hou, Tuo-Hung Li, Lain-Jong Chang, Wen-Hao Nat Commun Article A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe(2) can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (∼10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides. Nature Pub. Group 2015-11-25 /pmc/articles/PMC4674763/ /pubmed/26603335 http://dx.doi.org/10.1038/ncomms9963 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Hsu, Wei-Ting
Chen, Yen-Lun
Chen, Chiang-Hsiao
Liu, Pang-Shiuan
Hou, Tuo-Hung
Li, Lain-Jong
Chang, Wen-Hao
Optically initialized robust valley-polarized holes in monolayer WSe(2)
title Optically initialized robust valley-polarized holes in monolayer WSe(2)
title_full Optically initialized robust valley-polarized holes in monolayer WSe(2)
title_fullStr Optically initialized robust valley-polarized holes in monolayer WSe(2)
title_full_unstemmed Optically initialized robust valley-polarized holes in monolayer WSe(2)
title_short Optically initialized robust valley-polarized holes in monolayer WSe(2)
title_sort optically initialized robust valley-polarized holes in monolayer wse(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4674763/
https://www.ncbi.nlm.nih.gov/pubmed/26603335
http://dx.doi.org/10.1038/ncomms9963
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