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Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer
As cheap and abundant materials, transitional metal dichalcogenide monolayers have attracted increasing interests for their application as catalysts in hydrogen production. In this work, the hydrogen evolution reduction of doped vanadium disulfide monolayers is investigated based on first-principles...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4675759/ https://www.ncbi.nlm.nih.gov/pubmed/26659611 http://dx.doi.org/10.1186/s11671-015-1182-y |
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author | Qu, Yuanju Pan, Hui Kwok, Chi Tat Wang, Zisheng |
author_facet | Qu, Yuanju Pan, Hui Kwok, Chi Tat Wang, Zisheng |
author_sort | Qu, Yuanju |
collection | PubMed |
description | As cheap and abundant materials, transitional metal dichalcogenide monolayers have attracted increasing interests for their application as catalysts in hydrogen production. In this work, the hydrogen evolution reduction of doped vanadium disulfide monolayers is investigated based on first-principles calculations. We find that the doping elements and concentration affect strongly the catalytic ability of the monolayer. We show that Ti-doping can efficiently reduce the Gibbs free energy of hydrogen adsorption in a wide range of hydrogen coverage. The catalytic ability of the monolayer at high hydrogen coverage can be improved by low Ti-density doping, while that at low hydrogen coverage is enhanced by moderate Ti-density doping. We further show that it is much easier to substitute the Ti atom to the V atom in the vanadium disulfide (VS(2)) monolayer than other transitional metal atoms considered here due to its lowest and negative formation energy. It is expected that the Ti-doped VS(2) monolayer may be applicable in water electrolysis with improved efficiency. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-015-1182-y) contains supplementary material, which is available to authorized users. |
format | Online Article Text |
id | pubmed-4675759 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-46757592015-12-20 Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer Qu, Yuanju Pan, Hui Kwok, Chi Tat Wang, Zisheng Nanoscale Res Lett Nano Express As cheap and abundant materials, transitional metal dichalcogenide monolayers have attracted increasing interests for their application as catalysts in hydrogen production. In this work, the hydrogen evolution reduction of doped vanadium disulfide monolayers is investigated based on first-principles calculations. We find that the doping elements and concentration affect strongly the catalytic ability of the monolayer. We show that Ti-doping can efficiently reduce the Gibbs free energy of hydrogen adsorption in a wide range of hydrogen coverage. The catalytic ability of the monolayer at high hydrogen coverage can be improved by low Ti-density doping, while that at low hydrogen coverage is enhanced by moderate Ti-density doping. We further show that it is much easier to substitute the Ti atom to the V atom in the vanadium disulfide (VS(2)) monolayer than other transitional metal atoms considered here due to its lowest and negative formation energy. It is expected that the Ti-doped VS(2) monolayer may be applicable in water electrolysis with improved efficiency. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-015-1182-y) contains supplementary material, which is available to authorized users. Springer US 2015-12-10 /pmc/articles/PMC4675759/ /pubmed/26659611 http://dx.doi.org/10.1186/s11671-015-1182-y Text en © Qu et al. 2015 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Qu, Yuanju Pan, Hui Kwok, Chi Tat Wang, Zisheng Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title | Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title_full | Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title_fullStr | Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title_full_unstemmed | Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title_short | Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer |
title_sort | effect of doping on hydrogen evolution reaction of vanadium disulfide monolayer |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4675759/ https://www.ncbi.nlm.nih.gov/pubmed/26659611 http://dx.doi.org/10.1186/s11671-015-1182-y |
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