Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel mag...

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Detalles Bibliográficos
Autores principales: Liu, Houfang, Wang, Ran, Guo, Peng, Wen, Zhenchao, Feng, Jiafeng, Wei, Hongxiang, Han, Xiufeng, Ji, Yang, Zhang, Shufeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677325/
https://www.ncbi.nlm.nih.gov/pubmed/26658213
http://dx.doi.org/10.1038/srep18269

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4677325/
https://www.ncbi.nlm.nih.gov/pubmed/26658213
http://dx.doi.org/10.1038/srep18269

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