Positive-bias gate-controlled metal–insulator transition in ultrathin VO(2) channels with TiO(2) gate dielectrics

The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor...

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Detalles Bibliográficos
Autores principales: Yajima, Takeaki, Nishimura, Tomonori, Toriumi, Akira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682056/
https://www.ncbi.nlm.nih.gov/pubmed/26657761
http://dx.doi.org/10.1038/ncomms10104

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682056/
https://www.ncbi.nlm.nih.gov/pubmed/26657761
http://dx.doi.org/10.1038/ncomms10104

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