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Positive-bias gate-controlled metal–insulator transition in ultrathin VO(2) channels with TiO(2) gate dielectrics
The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682056/ https://www.ncbi.nlm.nih.gov/pubmed/26657761 http://dx.doi.org/10.1038/ncomms10104 |