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Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering...

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Detalles Bibliográficos
Autores principales:	Mao, Ling-Feng, Ning, Huansheng, Huo, Zong-Liang, Wang, Jin-Yan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682133/ https://www.ncbi.nlm.nih.gov/pubmed/26674338 http://dx.doi.org/10.1038/srep18307

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